Product Summary

The BG3130RE6327 is a DUAL N-Channel MOSFET Tetrode.

Parametrics

SN74LVC1G125DBVR absolute maximum ratings: (1)Drain-source voltage: 8 V;(2)Continuous drain current: 25 mA;(3)Gate 1/ gate 2-source current: 1 mA;(4)Gate 1/ gate 2-source voltage: 6 V;(5)Total power dissipation: 200 mW; (6)Storage temperature: -55 to 150 ℃;(7)Channel temperature: 150 ℃.

Features

BG3130RE6327 features: (1)Two gain controlled input stages for UHF and VHF -tuners e.g.(NTSC, PAL); (3)Optimized for UHF (amp.B) and VHF (amp.A);(4)Integrated gate protection diodes;(5)High AGC-range, low noise figure, high gain; (6)Improved cross modulation at gain reduction;(7)Pb-free (RoHS compliant) package;(8)Qualified according AEC Q101.

Diagrams

BG3130RE6327 block diagram

BG3123
BG3123

Other


Data Sheet

Negotiable 
BG3123 E6327
BG3123 E6327

Other


Data Sheet

Negotiable 
BG3123..
BG3123..

Other


Data Sheet

Negotiable 
BG3130
BG3130

Other


Data Sheet

Negotiable 
BG3140
BG3140

Other


Data Sheet

Negotiable